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TC55VD818FF-150 - 512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM) 12k字18位同步无具体时间的静态存储器(为512k字x18位同步无转向静态内存)

TC55VD818FF-150_1446698.PDF Datasheet


 Full text search : 512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM) 12k字18位同步无具体时间的静态存储器(为512k字x18位同步无转向静态内存)


 Related Part Number
PART Description Maker
TC55VD818FF-150 TC55VD818FF-133 TC55VD818FF-143 512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM) 12k字18位同步无具体时间的静态存储器(为512k字x18位同步无转向静态内存)
Toshiba Corporation
Toshiba, Corp.
UPD4482162GF-A60 UPD4482162GF-A60Y UPD4482182GF-A6 8M-bit(512K-word x 16-bit) Synchronous SRAM
8M-bit(512K-word x 18-bit) Synchronous SRAM
8M-bit(256K-word x 32-bit) Synchronous SRAM
8M-bit(256K-word x 36-bit) Synchronous SRAM
NEC
MSM538022E OKISEMICONDUCTORCO.LTD.-MSM538022E MSM5 512K X 16 MASK PROM, 80 ns, PDSO44
From old datasheet system
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit MASKROM
OKI ELECTRIC INDUSTRY CO LTD
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
M6MGB331S8AKT M6MGT331S8AKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
Renesas Electronics Corporation.
M6MGB331S8BKT M6MGT331S8BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
Renesas Electronics Corporation.
MR27V6452D 4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
OKI
MSM27C852CZ MSC27C852CZ MSM27C8B52CZ 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
MR27V1652D 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
OKI
M6MGT331S4BKT M6MGB331S4BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
Renesas Electronics Corporation
MSM27C3255CZ 1,048,576-Double Word x 32-Bit or 2,097,152-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
SDRAM - 16Mb
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
 
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TC55VD818FF-150 molex TC55VD818FF-150 header TC55VD818FF-150 terminal TC55VD818FF-150 signal TC55VD818FF-150 Bit
 

 

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